Articles | Volume 3, issue 1
https://doi.org/10.5194/gchron-3-259-2021
https://doi.org/10.5194/gchron-3-259-2021
Research article
 | 
04 May 2021
Research article |  | 04 May 2021

The closure temperature(s) of zircon Raman dating

Birk Härtel, Raymond Jonckheere, Bastian Wauschkuhn, and Lothar Ratschbacher

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Interactive discussion

Status: closed
Status: closed
AC: Author comment | RC: Referee comment | SC: Short comment | EC: Editor comment
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Peer-review completion

AR: Author's response | RR: Referee report | ED: Editor decision
ED: Publish as is (25 Mar 2021) by Klaus Mezger
ED: Publish subject to technical corrections (25 Mar 2021) by Klaus Mezger (Editor)
AR by Birk Härtel on behalf of the Authors (26 Mar 2021)  Author's response   Manuscript 

Post-review adjustments

AA: Author's adjustment | EA: Editor approval
AA by Birk Härtel on behalf of the Authors (30 Apr 2021)   Author's adjustment   Manuscript
EA: Adjustments approved (30 Apr 2021) by Klaus Mezger
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Short summary
We carried out thermal annealing experiments between 500 and 1000 °C to determine the closure temperature of radiation-damage annealing in zircon (ZrSiO4). Our results show that the different Raman bands of zircon respond differently to annealing. The repair is highest for the external rotation Raman band near 356.6 cm−1. The closure temperature estimates range from 250 to 370 °C for different bands. The differences in closure temperatures offer the prospect of multi-T zircon Raman dating.